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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.7A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.7A
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si4830ADY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 30-V drain-source voltage and a maximum continuous drain current of 7.5 A at 25 °C. The on-state resistance is 0.022 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V. The integrated Schottky diode has a forward voltage of 0.50 V at 1 A. The device operates within a junction temperature range of -55 to 150 °C.
Feature Summary
- Dual N-channel MOSFET configuration with an integrated Schottky diode for compact power management solutions.
- Optimized for PWM applications with guaranteed 100% Rg testing to ensure consistent switching performance.
- Halogen-free construction compliant with IEC 61249-2-21 standards.
Applications
- Asymmetrical Buck-Boost DC/DC Converter
- Synchronous rectification in low-voltage power supplies
Procurement Notes
Verify the specific ordering suffix when sourcing components, as the E3 designation indicates lead-free status while GE3 denotes both lead-free and halogen-free compliance. Confirm that the required RoHS directive version matches the project specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a combined high-current switch and freewheeling diode in a single surface-mount footprint. Ensure the gate drive voltage meets the threshold requirements for optimal RDS(on) performance. Evaluate thermal dissipation capabilities against the steady-state junction-to-ambient resistance ratings for the intended operating environment.
Part Context
This component belongs to the Si4830 family of dual MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device is designed to replace discrete MOSFET and diode combinations, reducing board space and parasitic inductance in synchronous rectifier circuits.
Replacement Considerations
The datasheet notes pin compatibility with the Si4830DY model. Verify electrical parameters and packaging options when considering alternative part numbers from the same manufacturer or other vendors to ensure functional equivalence.
