SI4834CDY-T1-E3

Overview

The Vishay Siliconix SI4834CDY-T1-E3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET technology. It features a SO-8 package and operates within a junction temperature range of -55 to 150 °C. Each channel provides a continuous drain current of 8.0 A at TC = 25 °C, with a maximum on-state resistance of 0.020 Ω at VGS = 10 V and 8 A. The device includes a Schottky diode rated for 30 V reverse voltage and 2.0 A forward current. Total gate charge is typically 16.5 nC at VDS = 15 V, VGS = 10 V, and ID = 8 A.

Feature Summary

• Dual N-channel configuration with integrated Schottky diode in a single SO-8 package
• TrenchFET power MOSFET technology ensuring low on-state resistance
• Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definition

Applications

• Notebook logic dc-to-dc conversion
• Low current dc-to-dc conversion

Procurement Notes

Verify the exact ordering suffix against official documentation, as variations such as -T1-GE3 may exist. Confirm component availability through authorized distributors or manufacturer channels, noting that specific supply status can change. Ensure compliance with environmental directives like RoHS when sourcing replacements or verifying current stock.

Selection Notes

Select this component for applications requiring dual isolated N-channel switching with synchronous rectification capabilities in a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances under steady-state and pulsed conditions.

Part Context

This part belongs to the Si4834CDY series from Vishay Siliconix, designed for high-efficiency power switching. It integrates two independent N-channel MOSFETs and a common cathode Schottky diode, optimizing board space for dual-rail or half-bridge configurations in portable electronics.

Replacement Considerations

SI4834CDY-T1-GE3

FAQ

What is the maximum continuous drain current for each channel?

Each channel supports a maximum continuous drain current of 8.0 A when the case temperature is maintained at 25 °C.

Does the device include a body diode or an external diode?

The device integrates a separate Schottky diode alongside the dual N-channel MOSFETs, rather than relying solely on the intrinsic body diodes.

What is the typical total gate charge at full load?

The typical total gate charge (Qg) is 16.5 nC when tested at VDS = 15 V, VGS = 10 V, and ID = 8 A.