SI4834CDY-T1-GE3

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：TrenchFET®

SKU:60b3c52e644a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：950pF @ 15V
Power - Max：2.9W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4834CDY-T1-GE3

Overview

The Vishay Siliconix SI4834CDY-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET technology. It operates within a junction temperature range of -55 to 150 °C and features a SO-8 surface-mount package. Each channel provides a continuous drain current of 8.0 A at TC = 25 °C, with a maximum on-state resistance of 0.020 Ω at VGS = 10 V and 8.0 A. The device includes a Schottky diode rated for 30 V reverse voltage and 2.0 A forward current. Gate charge is typically 7.3 nC at VGS = 4.5 V and 16.5 nC at VGS = 10 V.

Feature Summary

Dual N-channel configuration with integrated Schottky diode
TrenchFET power MOSFET technology
Halogen-free construction compliant with IEC 61249-2-21

Applications

Notebook logic dc-to-dc conversion
Low current dc-to-dc conversion

Procurement Notes

Verify the component against the official Vishay datasheet document number 68790. Confirm that the ordering suffix matches the required lead-free and halogen-free specifications. Ensure the physical package corresponds to the narrow SOIC-8 format. Validate all electrical parameters against the manufacturer's published limits before integration into designs.

Selection Notes

Select this component when a compact dual N-channel solution with an integrated body or external Schottky diode is required. The low gate charge supports efficient switching in low-current applications. Verify thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances for the target operating environment.

Part Context

This part belongs to the Vishay Siliconix Si4834 series of dual N-channel MOSFETs. The specific suffix indicates it is the lead-free and halogen-free variant packaged in tape and reel format. It shares the core electrical characteristics of the base Si4834CDY model while adhering to specific environmental compliance standards defined by the manufacturer.