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SI4892DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 8.8A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4892DY-T1-E3
- Description：MOSFET N-CH 30V 8.8A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 12.4A, 10V
- Vgs(th) (Max) @ Id：800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4892DY-T1-E3
Single FETs, MOSFETs Overview
The SI4892DY-T1-E3 is a silicon N-channel Power MOSFET from the Vishay Siliconix SI4 series, utilizing TrenchFET technology. It features a 30V drain-source voltage (Vds) and a 20V gate-source voltage (Vgs). The component is housed in an SOIC-8 surface-mount package. This device is designed for general-purpose switching applications requiring efficient power management within low-voltage constraints.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for optimized performance characteristics
- Designed for surface-mount installation via SOIC-8 packaging
- Operates as an N-channel enhancement mode field-effect transistor
Single FETs, MOSFETs Applications
- Low-voltage DC-DC converter circuits
- Power management modules
- General-purpose load switching
Single FETs, MOSFETs Procurement Notes
Verify current availability status as the component may be subject to limited supply or end-of-life restrictions. Confirm RoHS compliance details through official manufacturer documentation prior to integration. Ensure the specific suffix matches required tape-and-reel specifications for automated assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 30V Vds rating with SOIC-8 footprint compatibility. Consider thermal dissipation capabilities inherent to the silicon construction. Validate that the 20V Vgs limit aligns with the control logic levels of the target system interface.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SI4 series of discrete power semiconductors. The series focuses on high-density packaging solutions for modern electronics. The SOIC-8 form factor allows for compact board layouts while maintaining adequate thermal performance for standard switching duties.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for direct pin-compatible alternatives within the same voltage class. Verify that any substitute maintains identical SOIC-8 dimensions and electrical thresholds.
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