SI4900DY-T1-GE3

Overview

The Vishay Siliconix SI4900DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOIC-8 package. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 5.3 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.058 Ω at VGS = 10 V and 0.072 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 13 nC at VGS = 10 V. Maximum power dissipation is 3.1 W at TC = 25 °C, with an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a single surface-mount package
• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• LCD TV CCFL Inverter

Procurement Notes

Verify the component status before procurement as the SI4900DY-T1-GE3 may be subject to end-of-life or obsolescence notifications. Confirm availability through authorized distributors and validate that the specific ordering suffix matches the required lead-free and halogen-free specifications. Cross-reference datasheet revision E to ensure parameter accuracy.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with a 60 V rating. Ensure the design accommodates the thermal constraints, specifically the maximum junction-to-ambient resistance of 62.5 °C/W under steady-state conditions. Verify that the gate drive voltage meets the requirements for the specified RDS(on) levels.

Part Context

This part belongs to the Vishay Siliconix SI4900 series of dual MOSFETs. It is manufactured using silicon technology and is designed for surface mounting. The device integrates two independent N-channel enhancement mode field-effect transistors into one package to save board space.

Replacement Considerations

Check for direct replacements such as the SI4900DY-GE3 variant. Evaluate alternative dual N-channel MOSFETs with similar 60 V ratings and SOIC-8 footprints if the original part is unavailable.

FAQ

What is the typical total gate charge (Qg) for the SI4900DY?

The typical total gate charge is 13 nC when tested at VDS = 30 V, VGS = 10 V, and ID = 4.3 A.

What is the maximum junction temperature for operation?

The maximum operating junction temperature is 150 °C.

Is the device suitable for high-frequency switching?

Yes, it features low input capacitance (typical 665 pF) and fast turn-on/turn-off times, making it suitable for switching applications.