SI4904DY-T1-E3

Overview

The Vishay Siliconix Si4904DY-T1-E3 is a dual N-channel MOSFET with a 40-V drain-source voltage rating. It utilizes TrenchFET technology to achieve low on-state resistance, specified as 0.016 Ω at VGS = 10 V and 8 A. The device supports a continuous drain current of 8 A and features a maximum gate-source voltage of ±16 V. Packaged in an SO-8 surface-mount footprint, it operates within a junction temperature range of -55 °C to +150 °C. Key dynamic parameters include a total gate charge of 85 nC (max) at VGS = 10 V and a forward transconductance of 23 S.

Feature Summary

• TrenchFET power MOSFET technology for optimized performance
• Unconditional UIS tested for avalanche ruggedness
• 100% Rg tested for gate reliability

Applications

• CCFL Inverter

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 suffix indicates lead-free construction, while the -GE3 variant additionally meets halogen-free requirements per IEC 61249-2-21. Confirm that the required package configuration matches the intended PCB layout before procurement.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with a 40-V breakdown voltage. Ensure the thermal design accommodates the specified power dissipation limits, particularly under steady-state conditions where junction-to-ambient resistance dictates the maximum allowable heat load.

Part Context

This part belongs to the Vishay Siliconix Si4 series of TrenchFET MOSFETs. It is designed for general-purpose switching applications where low on-resistance and high efficiency are critical. The dual configuration allows for bridge or half-bridge topologies within a single small outline package.

Replacement Considerations

Si4904DY-T1-GE3 is a confirmed substitute offering identical electrical characteristics with added halogen-free compliance.