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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2390pF @ 20V
- Power - Max：3.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si4904DY-T1-GE3 is a dual N-channel 40-V MOSFET utilizing TrenchFET technology. It features an SO-8 surface-mount package with two independent channels. The device supports a continuous drain current of 8 A at a case temperature of 25 °C and withstands a pulsed drain current of 20 A. On-state resistance is specified at 0.016 Ω maximum at VGS = 10 V and 0.019 Ω maximum at VGS = 4.5 V. Total gate charge reaches 56 nC typically at VGS = 10 V. Operating junction and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- TrenchFET Power MOSFET architecture for optimized on-resistance
- Dual N-channel configuration in a single SO-8 package
- Unclamped Inductive Switching (UIS) tested for ruggedness
Applications
- CCFL Inverter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm halogen-free status, as the GE3 designation indicates lead-free and halogen-free compliance per IEC 61249-2-21 standards. Confirm that the component matches the exact document number 73793 revision C specifications before integration into designs requiring strict environmental compliance.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The SO-8 package provides efficient thermal dissipation through the drain foot. Ensure the design accounts for the 40-V drain-source voltage limit and verify that the gate drive voltage meets the requirements for achieving the minimum on-state resistance specifications.
Part Context
The Si4904DY belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. This series is engineered to deliver superior performance compared to standard planar technologies by reducing on-resistance and switching losses. The dual-channel format allows for space-constrained designs where multiple switching elements are needed within a minimal footprint.
Replacement Considerations
Consult official Vishay resources for verified cross-reference part numbers. Ensure any substitute maintains the same SO-8 pinout, voltage ratings, and thermal characteristics to guarantee mechanical and electrical compatibility without redesigning the printed circuit board layout.
