SI4920DY-T1-E3

SI4920DY-T1-E3

$1.50
  • Description:MOSFET 2N-CH 30V 8SOIC
  • Series:TrenchFET®

SKU:cda127353b20 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:25mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4920DY-T1-E3

Overview

The SI4920DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a surface-mount SOIC-8 package. The device features a drain-source voltage rating of 20V and a gate-source voltage limit of ±20V. At a case temperature of 25°C, it supports a continuous drain current of 6.7A. The on-resistance (RDS(on)) is specified at a maximum of 13mΩ when driven with a gate-source voltage of 10V, and 18mΩ at 4.5V. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • TrenchFET power FET technology for optimized performance
  • Low on-resistance for efficient power switching
  • Enhanced avalanche capability
  • Lead-free finish and halogen-free construction

Applications

  • DC/DC converters
  • Load switches
  • Power management circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status through official documentation. Check for obsolescence notices or lifecycle changes directly from Vishay before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low-side or high-side switching with moderate current capabilities. Ensure the thermal design accommodates the power dissipation at the expected load current. Verify that the gate drive voltage is sufficient to achieve the desired RDS(on) specification for efficiency targets.

Part Context

This part belongs to the SI49xx series of Vishay Siliconix P-channel MOSFETs. These devices are designed for general-purpose power switching applications where low on-resistance and fast switching speeds are critical. The SOIC-8 package provides a compact solution for space-constrained designs.

Replacement Considerations

Consult the official Vishay datasheet for recommended alternatives. Cross-reference parameters such as RDS(on), ID, VDS, and package type to ensure compatibility. Verify pinout alignment if substituting with parts from other manufacturers.

SI4920DY-T1-E3SI4920DY-T1-E3
$1.50
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