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The SI4920DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a surface-mount SOIC-8 package. The device features a drain-source voltage rating of 20V and a gate-source voltage limit of ±20V. At a case temperature of 25°C, it supports a continuous drain current of 6.7A. The on-resistance (RDS(on)) is specified at a maximum of 13mΩ when driven with a gate-source voltage of 10V, and 18mΩ at 4.5V. The component operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status through official documentation. Check for obsolescence notices or lifecycle changes directly from Vishay before finalizing procurement plans.
Select this component for applications requiring low-side or high-side switching with moderate current capabilities. Ensure the thermal design accommodates the power dissipation at the expected load current. Verify that the gate drive voltage is sufficient to achieve the desired RDS(on) specification for efficiency targets.
This part belongs to the SI49xx series of Vishay Siliconix P-channel MOSFETs. These devices are designed for general-purpose power switching applications where low on-resistance and fast switching speeds are critical. The SOIC-8 package provides a compact solution for space-constrained designs.
Consult the official Vishay datasheet for recommended alternatives. Cross-reference parameters such as RDS(on), ID, VDS, and package type to ensure compatibility. Verify pinout alignment if substituting with parts from other manufacturers.