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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：25mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4920DY-T1-GE3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 15 A per channel. The typical on-resistance (Rds(on)) is 6.5 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 3.1 W.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package for space-constrained designs.
- TrenchFET technology provides low on-resistance and optimized switching performance.
- Enhanced mode operation allows for direct logic-level control compatibility.
Applications
- DC-DC converter circuits requiring dual synchronous rectification.
- Load switch applications for power distribution management.
- Motor driver interfaces utilizing half-bridge configurations.
Procurement Notes
Verify the specific suffix T1-GE3 against the manufacturer datasheet to confirm tape-and-reel packaging and lead-free compliance. Confirm availability status as distribution listings may indicate end-of-life or regional restrictions. Ensure the ordering part number matches the exact electrical specifications required for the design.
Selection Notes
Select this component when a dual N-channel topology is required in an SOIC-8 footprint. Compare Rds(on) and gate charge parameters against alternative dual MOSFETs to ensure switching losses meet thermal constraints. Verify that the 20 V voltage rating provides sufficient margin for the target application's supply voltage.
Part Context
This part belongs to the SI4 series of Vishay Siliconix MOSFETs, which are designed for general-purpose power switching applications. The SI4920DY variant specifically addresses needs for dual-channel integration, reducing board space compared to discrete solutions. It is part of the broader TrenchFET family known for efficient power handling in small packages.
Replacement Considerations
Check for SI4920DY-GE3 as a potential non-tape variant substitute if packaging differences are acceptable. Verify pinout compatibility before substituting with other dual N-channel SOIC-8 MOSFETs from different manufacturers.
