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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2070pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4922BDY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOIC-8 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8 A at TC = 25 °C. The on-state resistance (RDS(on)) is specified as 16 mΩ at VGS = 10 V, 18 mΩ at VGS = 4.5 V, and 24 mΩ at VGS = 2.5 V. Total gate charge (Qg) reaches 62 nTyp at VGS = 10 V. Maximum power dissipation is 3.1 W at TC = 25 °C, with an operating junction temperature range from -50 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a single surface-mount package
- TrenchFET power MOSFET architecture for optimized performance
- Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definition
Applications
- DC-to-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the component against the official Vishay datasheet Document Number 74459 to confirm electrical parameters and pinout compatibility. Ensure that the specific ordering suffix matches the required lead-free and halogen-free specifications. Cross-reference manufacturer markings with standard SO-8 package dimensions to validate authenticity before integration into production assemblies.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power switching. Evaluate thermal constraints carefully, as the maximum power dissipation is limited by the SO-8 package size. Confirm that the application's gate drive voltage aligns with the specified RDS(on) test conditions to ensure optimal conduction losses and switching efficiency.
Part Context
This device belongs to the Si4922BDY series manufactured by Vishay Siliconix. It represents a dual-channel variant designed to replace discrete single-channel setups, thereby reducing board space. The product utilizes advanced TrenchFET technology to achieve low on-resistance characteristics suitable for efficient power conversion systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers or different package types for redesign purposes.
