SI4931DY-T1-E3

$1.50

Description：MOSFET 2P-CH 12V 6.7A 8SOIC
Series：TrenchFET®

SKU:54752228db26 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 6.7A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：6.7A
Rds On (Max) @ Id, Vgs：18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs：52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4931DY-T1-E3

Overview

The Vishay Siliconix Si4931DY-T1-E3 is a dual P-channel MOSFET in an SO-8 package. It features a -12 V drain-source voltage and a maximum continuous drain current of -8.9 A at 25 °C. The on-state resistance is 0.018 Ω at VGS = -4.5 V, with a gate threshold voltage ranging from -0.4 V to -1.0 V. Total gate charge is typically 34.5 nC, and the device supports a junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET power MOSFET technology
Advanced high cell density process
Halogen-free construction

Applications

Load switching

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through authorized distributors or direct manufacturer channels. Ensure ordering suffixes match exact lead-free requirements for your specific assembly processes.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Verify that the gate drive voltage meets the minimum threshold for optimal on-state resistance performance. Consider the maximum pulsed drain current limits when designing circuits subject to transient load conditions.

Part Context

This component belongs to the Si4931DY series manufactured by Vishay Siliconix. It utilizes TrenchFET technology within an SO-8 surface-mount package. The product line focuses on providing efficient power switching solutions with advanced cell density characteristics.

Replacement Considerations

Si4931DY-T1-GE3 serves as a verified alternative variant offering identical electrical characteristics while ensuring halogen-free compliance according to IEC standards.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.