SI4931DY-T1-GE3

Overview

The Vishay Siliconix SI4931DY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of -12 V and a continuous drain current of -8.9 A at 25 °C. The device exhibits a maximum on-state resistance of 0.018 Ω at VGS = -4.5 V and -8.9 A. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 2.0 W at 25 °C.

Feature Summary

• TrenchFET Power MOSFET architecture for advanced high cell density processing
• Halogen-free construction compliant with IEC 61249-2-21 definition
• RoHS Directive 2002/95/EC compliant manufacturing

Applications

• Load switching

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free status per IEC standards. Confirm package dimensions and thermal characteristics match the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component for low-voltage applications requiring dual P-channel isolation within a compact footprint. Evaluate the 0.018 Ω RDS(on) specification against circuit load currents to ensure adequate thermal performance without excessive heat sinking requirements.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family of dual MOSFETs designed for space-constrained power management circuits. The SO-8 package provides a standardized mounting profile compatible with automated surface-mount assembly processes commonly used in consumer electronics manufacturing.

Replacement Considerations

SI4931DY-T1-E3 (Lead-free)