SI4932DY-T1-GE3

Overview

The Vishay Siliconix SI4932DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage and an 8 A continuous drain current rating. The on-state resistance is specified at 0.015 Ω at VGS = 10 V and 7 A, or 0.017 Ω at VGS = 4.5 V and 5 A. Total gate charge is typically 32 nC at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.

Feature Summary

• Dual N-channel configuration with independent gates and shared drains
• TrenchFET power MOSFET architecture for low conduction losses
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• DC/DC conversion circuits
• Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact part number required for your design specifications. Ensure compatibility with the SO-8 package dimensions and thermal requirements before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET with a 30 V rating and approximately 8 A current capability is required. Consider the 0.015 Ω on-resistance at 10 V gate drive for standard logic levels, or the 0.017 Ω value at 4.5 V if operating with lower gate voltages. Verify thermal management needs based on the 3.2 W maximum power dissipation rating.

Part Context

This component belongs to the Vishay Siliconix Si4932DY series, which consists of dual N-channel MOSFETs. The product utilizes TrenchFET technology to achieve low on-resistance and fast switching characteristics. It is designed for surface-mount assembly in compact electronic designs requiring efficient power handling.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.