SI4936ADY-T1-GE3

Overview

The Vishay Siliconix SI4936ADY-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a continuous drain current of 5.9 A at 25 °C, with a maximum on-state resistance of 0.036 Ω at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 2.0 W at 25 °C. Packaged in an SO-8 surface-mount footprint, it includes two independent channels for compact circuit integration.

Feature Summary

• Dual N-channel configuration housed in a single SO-8 package
• TrenchFET power MOSFET architecture for low conduction loss
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• DC-to-DC converter output stages
• Load switching applications
• Power management circuits requiring dual channel control

Procurement Notes

Verify the specific ordering suffix when sourcing components. The GE3 designation indicates lead-free and halogen-free compliance, whereas the E3 suffix denotes lead-free status only. Confirm that the required environmental specifications align with the exact suffix to ensure material consistency during procurement.

Selection Notes

Select this component for designs requiring a 30 V breakdown voltage and dual N-channel functionality. Evaluate thermal constraints carefully, as the SO-8 package provides limited heat dissipation compared to larger footprints. Ensure gate drive voltages remain within the specified limits to maintain optimal on-resistance performance.

Part Context

This part belongs to the Vishay Siliconix SI4936 family of dual N-channel MOSFETs. It shares the same electrical characteristics and pinout as the SI4936ADY-T1-E3 variant, differing primarily in halogen content. Both variants utilize the standard SO-8 narrow package format.

Replacement Considerations

The SI4936ADY-T1-E3 serves as a direct functional replacement, sharing identical electrical parameters and pin configurations. Verify halogen requirements before substituting, as the E3 variant does not guarantee halogen-free compliance unlike the GE3 version.

FAQ

What is the maximum continuous drain current at 70 °C?

The maximum continuous drain current decreases to 4.7 A at an ambient temperature of 70 °C.

Does the device support synchronous rectification?

Yes, the integrated body diode allows for synchronous rectification applications, though external Schottky diodes may be preferred for high-frequency efficiency.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGS(th)) is 1.0 V, with a maximum specification of 3.0 V under standard test conditions.