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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT),-
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A
- Rds On (Max) @ Id, Vgs：40mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 15V
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4936CDY-T1-E3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET power technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.8 A at TC = 25 °C. The device offers a maximum on-state resistance of 0.040 Ω at VGS = 10 V and 0.050 Ω at VGS = 4.5 V. Total gate charge is typically 2.8 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 to +150 °C and is housed in an SO-8 package.
Feature Summary
- Dual N-channel configuration with TrenchFET power MOSFET technology
- Low on-state resistance optimized for logic-level gate drive voltages
- High thermal stability supporting operation up to 150 °C junction temperature
Applications
- Low current DC/DC conversion
- Notebook system power
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation, as lead-free and halogen-free variants may carry different suffixes such as GE3. Confirm component availability status directly with authorized distributors or the manufacturer, as production lifecycles change. Ensure compliance requirements match the intended application environment before procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with 30 V breakdown voltage is required. Verify that the 5.8 A continuous current rating meets the load requirements at the expected case temperature. Check that the gate drive voltage aligns with the specified RDS(on) thresholds at 10 V or 4.5 V for optimal efficiency.
Part Context
This part belongs to the Vishay Siliconix SI4936 series of dual N-channel MOSFETs. It shares the SO-8 package form factor with other devices in the family but differs in electrical ratings. The SI4936CDY variant specifically targets low-voltage, high-current switching applications requiring compact surface-mount solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Vishay documentation for recommended alternatives.
