SI4940DY-T1-GE3

Overview

The Vishay Siliconix SI4940DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 40 V and a gate-source voltage (VGS) of ±20 V. The device provides a continuous drain current (ID) of 5.7 A at 25 °C, with a maximum on-state resistance (RDS(on)) of 0.036 Ω at VGS = 10 V and 0.059 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 14 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a single surface-mount package
• TrenchFET power MOSFET architecture for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• DC-DC converter circuits
• Power switching applications
• Load switch implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free status per IEC 61249-2-21. Confirm that the component meets RoHS Directive 2002/95/EC standards before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. Evaluate thermal management needs based on the specified junction-to-ambient resistance ratings. Ensure the application voltage remains below the 40 V drain-source limit and verify gate drive levels align with the specified RDS(on) thresholds.

Part Context

This part belongs to the Vishay Siliconix Si4940DY series of dual N-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within an SO-8 footprint. The product line focuses on providing efficient power switching solutions for space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before considering alternative components.