SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SI4941EDY-T1-E3 is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage rating of 60 V and a continuous drain current of 25 A at 25 °C. The device incorporates an ultra-low on-resistance of 17 mΩ maximum at a gate-source voltage of 10 V. Designed for surface-mount applications, it is housed in a DPAK package with a thermal resistance from junction to case of 1.8 °C/W. The component operates within a temperature range of -55 °C to +175 °C and supports a pulsed drain current of 100 A.
Verify the specific suffix 'E3' confirms lead-free compliance and RoHS standards as per the manufacturer's datasheet. Confirm the package type matches the required PCB footprint. Check for obsolescence notices or lifecycle status updates directly from Vishay documentation before finalizing procurement plans.
Select this component when a P-channel MOSFET with 60 V breakdown and high current capacity is required. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the 10 V threshold for optimal on-resistance performance.
This part belongs to the SI49xx series of P-channel MOSFETs from Vishay Siliconix. The series is characterized by advanced trench gate technology designed for high-efficiency power switching. The DPAK package provides a balance between current handling and thermal performance for surface-mount designs.
Consult official Vishay cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics. Verify package compatibility if substituting with similar parts from other manufacturers.