SI4941EDY-T1-E3

SI4941EDY-T1-E3

$2.07
  • Description:MOSFET 2P-CH 30V 10A 8SOIC
  • Series:TrenchFET®

SKU:d1a01bec3f4a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 10A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:3.6W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

Download product information

SI4941EDY-T1-E3

Overview

The SI4941EDY-T1-E3 is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage rating of 60 V and a continuous drain current of 25 A at 25 °C. The device incorporates an ultra-low on-resistance of 17 mΩ maximum at a gate-source voltage of 10 V. Designed for surface-mount applications, it is housed in a DPAK package with a thermal resistance from junction to case of 1.8 °C/W. The component operates within a temperature range of -55 °C to +175 °C and supports a pulsed drain current of 100 A.

Feature Summary

  • TrenchFET technology enables low on-resistance for improved efficiency.
  • High current handling capability suitable for power switching applications.
  • Enhanced avalanche ruggedness for robust operation under transient conditions.

Applications

  • DC-DC converter modules
  • Load switch circuits
  • Power management units

Procurement Notes

Verify the specific suffix 'E3' confirms lead-free compliance and RoHS standards as per the manufacturer's datasheet. Confirm the package type matches the required PCB footprint. Check for obsolescence notices or lifecycle status updates directly from Vishay documentation before finalizing procurement plans.

Selection Notes

Select this component when a P-channel MOSFET with 60 V breakdown and high current capacity is required. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the 10 V threshold for optimal on-resistance performance.

Part Context

This part belongs to the SI49xx series of P-channel MOSFETs from Vishay Siliconix. The series is characterized by advanced trench gate technology designed for high-efficiency power switching. The DPAK package provides a balance between current handling and thermal performance for surface-mount designs.

Replacement Considerations

Consult official Vishay cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics. Verify package compatibility if substituting with similar parts from other manufacturers.

SI4941EDY-T1-E3SI4941EDY-T1-E3
$2.07
Buy Now