SI4942DY-T1-GE3

Overview

The SI4942DY-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The component is designed for high-efficiency switching applications, offering low on-resistance characteristics typical of the series. It operates within a junction temperature range of -55°C to +150°C. The device complies with RoHS standards and is supplied in reel packaging. This specific part number is identified as obsolete in current distributor catalogs.

Feature Summary

• Single N-channel configuration utilizing TrenchFET power transistor technology
• Surface-mount installation in an SOIC-8 package format
• Enhanced mode operation suitable for low-voltage switching

Applications

• DC-DC converter circuits
• Power management modules
• Load switching applications

Procurement Notes

This component is listed as obsolete or end-of-life by major distributors. Verification of current production status directly with Vishay Siliconix is required before design finalization. Sourcing may be limited to surplus channels or require substitution planning. Confirm availability and authenticity through authorized supply chains if procurement is attempted.

Selection Notes

Designers should evaluate alternative active components from the same manufacturer family due to the obsolescence of this specific part. Consider parameters such as drain-source voltage, continuous current capacity, and on-resistance when selecting a replacement. Ensure the substitute maintains compatibility with existing PCB footprints and thermal management requirements.

Part Context

The SI4942DY belongs to the SI4 series of TrenchFET MOSFETs from Vishay Siliconix. These devices are engineered for low gate charge and fast switching speeds. The SOIC-8 package provides a compact solution for power density constraints. The series is widely used in consumer electronics and industrial control systems requiring efficient power regulation.