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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：19.2mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1945pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-50°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Si4943CDY is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20 V drain-source voltage and an -8 A continuous drain current rating. The maximum on-state resistance is 19.2 mΩ at VGS = -10 V and 33 mΩ at VGS = -4.5 V. Total gate charge is typically 20 nC at VGS = -4.5 V. The device operates within a junction temperature range of -50 °C to +150 °C and is housed in an SO-8 surface-mount package.
Feature Summary
- Dual P-channel configuration with integrated body diodes
- TrenchFET power MOSFET architecture for low on-resistance
- 100% tested for gate resistance and single-pulse avalanche energy
Applications
- Load switching for computer systems
- Load switching for game systems
- Battery switching for 2-cell Li-ion applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The datasheet specifies Si4943CDY-T1-GE3 as the lead-free and halogen-free variant. Confirm that the received part matches the exact alphanumeric designation required for your design, as suffixes indicate packaging or material compliance variations.
Selection Notes
Select this component for low-voltage load switching where compact dual-channel integration is necessary. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal management capabilities against the specified junction-to-ambient and junction-to-foot thermal resistance ratings for the target operating environment.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family of dual P-channel MOSFETs. It is designed for general-purpose switching applications requiring high efficiency and fast switching speeds in a small surface-mount footprint. The dual configuration allows for independent control of two channels within a single package.
Replacement Considerations
Direct replacement requires verifying pinout compatibility and electrical parameters. Check if alternative dual P-channel MOSFETs in SO-8 packages meet the -20 V, -8 A, and RDS(on) specifications. Ensure the substitute device supports the required gate drive voltages and thermal performance.
