SI4944DY-T1-E3

Overview

The SI4944DY-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source voltage (Vds) of 30 V and a gate-source voltage (Vgs) rating of ±20 V. The device supports a continuous drain current (Id) of 9.3 A at 25°C, with a maximum power dissipation of 1.3 W in an SOIC-8 surface-mount package. Utilizing TrenchFET technology, it offers low on-resistance characteristics suitable for compact power management applications.

Feature Summary

• Dual N-channel configuration within a single compact package
• TrenchFET power transistor technology for optimized performance
• Surface-mount design compatible with automated assembly processes

Applications

• Power supply circuits requiring dual switching elements
• Battery protection modules
• DC-DC converter topologies

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as availability may be limited. Ensure the specific suffix matches project requirements for tape and reel specifications.

Selection Notes

Select this component when a dual N-channel solution is required in an SOIC-8 footprint. Evaluate thermal constraints carefully due to the 1.3 W power dissipation limit. Compare against single-channel alternatives if space allows, considering the trade-off between integration density and individual channel current handling capabilities.

Part Context

This part belongs to the SI49xx series of Vishay Siliconix MOSFETs, designed for low-voltage, high-current applications. The family utilizes advanced trench gate technology to minimize conduction losses while maintaining robust switching performance in small outline packages.

Replacement Considerations

SI4202DY-T1-GE3 is identified as a recommended alternative. Verify pin compatibility and electrical parameter alignment before substitution.