SI4944DY-T1-GE3

Description：MOSFET 2N-CH 30V 9.3A 8SOIC
Series：TrenchFET®

SKU:1beda400fc89 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 9.3A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9.3A
Rds On (Max) @ Id, Vgs：9.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4944DY-T1-GE3

Overview

The SI4944DY-T1-GE3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device features a continuous drain current of 9.3A and a drain-source voltage rating of 30V. Power dissipation is rated at 1.3W in an 8-SOIC surface-mount package. Key electrical parameters include a maximum Rds(on) of 25mΩ at Vgs=4.5V and a gate charge of 16nC.

Feature Summary

Dual N-channel configuration for synchronized switching applications
TrenchFET technology ensures minimal conduction losses
Logic-level gate drive compatibility for efficient control

Applications

DC-DC converter synchronous rectification
Motor driver output stages
Power management integrated circuits (PMICs)
Battery protection circuits

Procurement Notes

Verify the specific suffix -T1-GE3 against the manufacturer datasheet to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering quantity aligns with standard reel sizes. Cross-reference the component marking code with official documentation to prevent counterfeit substitution during procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power switching. The 8-SOIC package offers a balance between thermal performance and board space efficiency. Consider the 30V rating and 9.3A current limit to ensure adequate headroom for the target application's peak loads.

Part Context

This part belongs to the SI4 series of discrete MOSFETs from Vishay Siliconix. It is designed for high-efficiency power management in portable and industrial electronics. The dual configuration simplifies circuit design by integrating two matched devices in a single footprint, reducing assembly complexity compared to discrete components.