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The SI4947ADY-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 12 A. At a gate-source voltage of 10 V, the maximum on-resistance is specified at 15 mΩ. The component supports a maximum power dissipation of 4.5 W and operates within a temperature range from -55 °C to +150 °C.
Verify the specific manufacturer datasheet for the SI4947ADY-T1-GE3 to confirm all electrical parameters and mechanical dimensions before integration. Ensure that the SOIC-8 footprint matches the design requirements. Cross-reference with official Vishay documentation to validate RoHS compliance status and lead times directly with authorized distributors.
Select this component when a 60 V N-channel MOSFET with high current capability is required in an SOIC-8 package. Compare the 15 mΩ on-resistance against thermal constraints in the target application. Verify that the 12 A continuous current rating exceeds the peak load demands of the circuit design.
This part belongs to the Vishay Siliconix SI49xx series of TrenchFET MOSFETs. These components are designed for general-purpose power switching applications requiring efficient performance in compact surface-mount packages. The series offers various voltage and current ratings to suit different power management needs.
Check for direct replacements such as the SI4947DY or other Vishay parts with identical 60 V, 12 A specifications in SOIC-8 packages. Ensure pinout compatibility and similar thermal characteristics when substituting.