SI4948BEY-T1-E3

Overview

The Vishay Siliconix SI4948BEY-T1-E3 is a dual P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides two independent channels in an SO-8 surface-mount package. At VGS = -10 V, the maximum on-state resistance is 0.120 Ω with a continuous drain current of -3.1 A. At VGS = -4.5 V, the resistance is 0.150 Ω with a current of -2.8 A. Key dynamic parameters include a total gate charge of 22 nC, turn-on delay time of 15 ns, rise time of 22 ns, turn-off delay time of 75 ns, and fall time of 55 ns.

Feature Summary

• Dual-channel integration for space-efficient circuit layouts
• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Power management circuits requiring dual P-channel switching
• Load switch applications in embedded systems
• Low-side or high-side control in symmetric power topologies

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance and halogen-free status through supplier documentation. Ensure the ordering suffix matches the required lead-free variant. Validate thermal characteristics against specific PCB layout conditions before finalizing procurement decisions.

Selection Notes

Select this component when dual P-channel isolation is required in a compact SO-8 footprint. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage range (-1 V to 3 V) for compatibility with logic-level drivers. Verify that the continuous drain current ratings align with peak load demands under expected operating temperatures.

Part Context

This part belongs to the Vishay Siliconix Si4948BEY series of dual P-channel MOSFETs. It is manufactured using silicon technology and packaged in an SO-8 (Narrow) configuration. The product line emphasizes low on-resistance and fast switching capabilities suitable for general-purpose power switching applications.

Replacement Considerations

Direct pin-compatible alternatives may exist from other manufacturers offering similar voltage and current ratings. Verify that substitute components match the SO-8 package dimensions and thermal resistance characteristics. Ensure electrical parameters such as RDS(on) and gate charge are comparable to maintain circuit performance.