SI4948BEY-T1-GE3

SI4948BEY-T1-GE3

$1.58
  • Description:MOSFET 2P-CH 60V 2.4A 8SOIC
  • Series:TrenchFET®

SKU:c79f1d27843e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 60V 2.4A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:2.4A
  • Rds On (Max) @ Id, Vgs:120mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.4W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4948BEY-T1-GE3

Overview

The Vishay Siliconix SI4948BEY-T1-GE3 is a dual P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides two independent channels in an SO-8 surface-mount package. At VGS = -10 V, the maximum on-state resistance is 0.120 Ω with a continuous drain current of -3.1 A. At VGS = -4.5 V, the resistance increases to 0.150 Ω with a current of -2.8 A. Key dynamic parameters include a total gate charge of 22 nC and a forward transconductance of 8.5 S.

Feature Summary

  • Dual P-channel configuration for space-efficient circuit designs
  • TrenchFET power MOSFET technology for optimized performance
  • Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

  • Power management circuits requiring dual channel control
  • Low-side switching applications compatible with logic levels
  • Automotive electronics systems

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm the ordering suffix matches the required halogen-free specification (GE3). Ensure the package type corresponds to the narrow SOIC-8 outline defined in document 71192. Validate that the supplier provides traceability data consistent with Vishay manufacturing records.

Selection Notes

Select this component when a dual P-channel solution is required with a -60 V breakdown voltage. The -175 °C maximum junction temperature supports high-temperature environments. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the thermal resistance ratings for heat dissipation calculations in the target application layout.

Part Context

This part belongs to the Vishay Siliconix Si4948BEY series of dual P-channel MOSFETs. It is manufactured using silicon technology and packaged in an SO-8 footprint. The product complies with RoHS Directive 2002/95/EC. The datasheet reference number is 72847, revision B.

Replacement Considerations

Direct replacements must match the dual P-channel topology, -60 V rating, and SO-8 package. Verify pinout compatibility and thermal characteristics before substitution.

SI4948BEY-T1-GE3SI4948BEY-T1-GE3
$1.58
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