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The Vishay Siliconix SI4948BEY-T1-GE3 is a dual P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides two independent channels in an SO-8 surface-mount package. At VGS = -10 V, the maximum on-state resistance is 0.120 Ω with a continuous drain current of -3.1 A. At VGS = -4.5 V, the resistance increases to 0.150 Ω with a current of -2.8 A. Key dynamic parameters include a total gate charge of 22 nC and a forward transconductance of 8.5 S.
Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm the ordering suffix matches the required halogen-free specification (GE3). Ensure the package type corresponds to the narrow SOIC-8 outline defined in document 71192. Validate that the supplier provides traceability data consistent with Vishay manufacturing records.
Select this component when a dual P-channel solution is required with a -60 V breakdown voltage. The -175 °C maximum junction temperature supports high-temperature environments. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the thermal resistance ratings for heat dissipation calculations in the target application layout.
This part belongs to the Vishay Siliconix Si4948BEY series of dual P-channel MOSFETs. It is manufactured using silicon technology and packaged in an SO-8 footprint. The product complies with RoHS Directive 2002/95/EC. The datasheet reference number is 72847, revision B.
Direct replacements must match the dual P-channel topology, -60 V rating, and SO-8 package. Verify pinout compatibility and thermal characteristics before substitution.