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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：680pF @ 13V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4952DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage of 25 V and a continuous drain current of 8 A. The on-state resistance is specified at 0.023 Ω at VGS = 10 V and 0.028 Ω at VGS = 4.5 V. Total gate charge is typically 5.5 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to 150 °C.
Feature Summary
- Dual N-channel configuration with independent channels for compact integration
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- DC/DC Converter
- Gaming
- Notebook System Power
Procurement Notes
Verify the specific ordering suffix when sourcing components. The E3 designation indicates lead-free status. Confirm RoHS compliance requirements against the directive 2002/95/EC. Ensure the component matches the exact datasheet revision C (S09-0764) to validate all electrical parameters and thermal characteristics during procurement.
Selection Notes
Evaluate the maximum junction-to-ambient thermal resistance of 70 °C/W for heat dissipation requirements. Consider the 25 V drain-source voltage limit for circuit protection. Verify that the 8 A continuous drain current rating accommodates peak load demands without exceeding package limitations under steady-state conditions.
Part Context
This component belongs to the Vishay Siliconix Si4952DY series of dual N-channel MOSFETs. It utilizes the SO-8 narrow package format. The product line incorporates TrenchFET technology designed for efficient power switching applications within consumer electronics and computing systems.
Replacement Considerations
Si4952DY-T1-GE3 is a verified equivalent part number offering identical electrical specifications while explicitly confirming halogen-free compliance alongside lead-free status.
