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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：680pF @ 13V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4952DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 8 A at TC = 25 °C. The on-state resistance (RDS(on)) is specified as 0.023 Ω at VGS = 10 V and 0.028 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 5.5 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a single SO-8 package
- TrenchFET power MOSFET technology for low on-resistance
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- DC/DC converters
- Gaming systems
- Notebook system power management
Procurement Notes
Verify the component against the official Vishay datasheet Document Number 70448 to confirm electrical parameters and pinout compatibility. Ensure that the specific ordering suffix matches the required halogen-free status. Validate thermal performance requirements against the provided junction-to-ambient resistance ratings before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Evaluate the 25 V breakdown voltage and 8 A current rating against circuit demands. Consider the low gate charge for switching efficiency. Verify that the SO-8 footprint aligns with the PCB layout constraints and thermal dissipation capabilities of the target design.
Part Context
This part belongs to the Vishay Siliconix Si4952DY series of dual N-channel MOSFETs. It is designed for surface-mount applications requiring high density. The device integrates two independent N-channel MOSFETs into a single package to save board space compared to discrete components.
Replacement Considerations
Check for direct replacements within the Vishay portfolio that share identical pinouts and electrical characteristics. Verify that any substitute maintains the same SO-8 package dimensions and thermal resistance values to ensure mechanical and thermal compatibility without redesigning the host circuit.
