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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3.7A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A
- Rds On (Max) @ Id, Vgs：53mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4953ADY-T1-E3 is a dual N-channel enhancement mode field effect transistor manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current of 6.9 A. Its typical on-resistance is 35 mOhms at a gate-source voltage of 10 V. The component operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 2.8 W.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package for space-constrained designs.
- TrenchFET technology provides low on-resistance and optimized switching performance characteristics.
Applications
- DC-DC converter circuits requiring dual synchronous rectification or high-side/low-side driving.
- Load switch applications managing power distribution for multiple rails.
- Battery protection modules utilizing dual-channel control logic.
Procurement Notes
Verify the specific suffix E3 confirms lead-free compliance and RoHS status against current manufacturer declarations. Confirm the T1 suffix indicates reel packaging if bulk tape handling is required. Check for obsolescence notices as this series may be subject to lifecycle changes. Validate thermal resistance parameters from the official datasheet for PCB layout planning.
Selection Notes
Select this component when a dual N-channel topology is necessary within an SOIC-8 footprint. Ensure the 30 V drain-source voltage rating exceeds the maximum circuit operating voltage. Verify that the 6.9 A continuous current capability meets the load requirements under expected thermal conditions. Compare total gate charge specifications against driver capabilities for optimal switching speed.
Part Context
This part belongs to the SI49xxADY series of dual MOSFETs from Vishay Siliconix. These devices are designed to replace discrete dual setups, reducing board area and parasitic inductance. The SOIC-8 package offers a balance between thermal performance and mounting density for consumer and industrial electronics.
Replacement Considerations
Consult the Vishay cross-reference guide for verified alternatives. Potential substitutes include other dual N-channel MOSFETs in SOIC-8 packages with matching 30 V ratings and comparable on-resistance values. Ensure pinout compatibility before substitution.
