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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4.9A 8SOIC
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
- Rds On (Max) @ Id, Vgs：53mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4953DY is an N-channel Power MOSFET manufactured by Vishay Siliconix, formerly Fairchild Semiconductor. It features a maximum drain-source voltage of -30V and a gate-source voltage rating of ±20V. The device supports a continuous drain current of -17A at room temperature and -11A at elevated temperatures. Key electrical parameters include a maximum on-resistance of 0.016 ohms at a gate drive of -4.5V and a typical input capacitance of 1800 pF. The component is housed in a compact SO-8 surface-mount package.
Feature Summary
- N-channel enhancement mode power transistor
- Low on-resistance for efficient conduction
- Surface-mount SO-8 packaging
Applications
- DC-DC converter circuits
- Synchronous rectification applications
- Load switching modules
Procurement Notes
Verify the manufacturer designation carefully, as this part number is associated with Vishay Siliconix following industry acquisitions. Confirm the specific tape-and-reel quantity and ensure the datasheet matches the required thermal and electrical specifications for the target design environment before finalizing procurement.
Selection Notes
Select this component for low-voltage DC applications requiring moderate current handling capabilities. Ensure the operating junction temperature remains within specified limits to maintain the rated current capacity. Verify that the gate drive voltage aligns with the specified threshold for optimal on-state performance.
Part Context
This component belongs to the family of low-voltage N-channel MOSFETs designed for power management tasks. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The SO-8 package provides a balance between thermal dissipation and board space efficiency for consumer and industrial electronics.
Replacement Considerations
Consult official cross-reference lists for verified substitutes such as the SI4953DDY or equivalent parts from other manufacturers offering identical pinouts and electrical ratings.
