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Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4965DY-T1-GE3 is a single N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 8 A. Its on-resistance is specified at 29 mΩ, with a gate threshold voltage of 3 V and total gate charge of 11 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 3.6 W.
Feature Summary
- Single-channel N-type configuration for efficient switching applications
- TrenchFET technology implementation for optimized performance characteristics
- Enhancement mode operation compatible with standard logic levels
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure the SOIC-8 footprint matches the design layout requirements. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity.
Selection Notes
Select this component when a 60 V N-channel MOSFET with low on-resistance is required in an SOIC-8 package. Consider the 8 A current rating and 3.6 W power dissipation limits for thermal management. Evaluate the 29 mΩ on-resistance for efficiency needs. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds.
Part Context
This part belongs to the Vishay Siliconix SI4 series of MOSFETs. It shares the SOIC-8 package form factor with other devices in the lineup. The TrenchFET branding indicates the use of advanced trench gate technology. It serves as a discrete power switching solution within the broader transistor product category.
Replacement Considerations
SI4965DY-E3 is listed as an alias for this component. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official replacement guides for validated alternatives.
