SI4967DY-T1-GE3

Description：MOSFET 2P-CH 12V 8SOIC
Series：TrenchFET®

SKU:859042242a6a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：23mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4967DY-T1-GE3

Overview

The SI4967DY-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 12V and a continuous drain current capacity of 7.5A. Maximum power dissipation is specified at 2W. The component operates within a temperature range from -55°C to +150°C junction temperature. It is part of the SI4 series and carries the RoHS compliance designation GE3.

Feature Summary

Single N-channel configuration utilizing TrenchFET planar technology for low on-resistance performance.

Applications

DC-DC converter circuits
Power switching applications
Load control modules

Procurement Notes

Verify the specific suffix requirements when sourcing replacements, as the -T1-GE3 designation indicates reel packaging with lead-free composition. Confirm availability status directly with authorized distributors or the manufacturer, as supply conditions may vary. Ensure that the SOIC-8 footprint matches the target PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component for low-voltage applications requiring moderate current handling capabilities. The 12V rating suits systems operating below this threshold. Consider the 2W power dissipation limit and thermal management requirements for the SOIC-8 package. Verify gate drive compatibility with the specified threshold characteristics for efficient switching operation in the intended circuit design.

Part Context

This component belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. The SI4967DY variant represents a specific low-voltage, high-current option within this family. The -T1-GE3 suffix denotes tape-and-reel packaging and environmental compliance. It serves as a discrete switching element in power electronics designs requiring reliable N-channel performance.