SI5401DC-T1-E3

Single FETs, MOSFETs Overview

The SI5401DC-T1-E3 is a single N-channel MOSFET from the Vishay Siliconix SI5 series, utilizing TrenchFET technology. It is housed in an 8-lead ChipFET package designed for surface-mount applications. The device operates with a drain-source voltage rating of 20V and supports continuous drain currents up to 6.7A. Key electrical characteristics include a maximum on-resistance of 0.025 ohms at a gate-source voltage of 4.5V, ensuring efficient power switching. The component features a maximum power dissipation of 2.5W and is rated for junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET technology for optimized performance and low on-resistance.
• Designed for high-efficiency surface-mount integration via the ChipFET package.
• Supports enhancement mode operation for reliable switching control.

Single FETs, MOSFETs Applications

• Power management circuits requiring low-voltage switching
• Battery protection modules
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E3 confirms lead-free compliance before procurement. Confirm availability status as distribution channels may vary. Ensure the ChipFET-8 footprint matches the target PCB layout. Validate that the 20V rating meets the circuit's peak voltage requirements. Check for obsolescence notices from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel solution is required for 20V systems. The low on-resistance minimizes conduction losses in power paths. The ChipFET package offers thermal efficiency for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal Rds(on). Consider the 150°C junction temperature limit for thermal management.

Single FETs, MOSFETs Part Context

This part belongs to the SI5 series of power MOSFETs manufactured by Vishay Siliconix. The series is characterized by the use of advanced TrenchFET process technology. These devices are engineered for general-purpose switching applications where size and efficiency are critical factors. The SI5401 variant specifically targets low-voltage, medium-current scenarios.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for direct pin-compatible substitutes. Verify that any alternative maintains the same ChipFET-8 footprint and electrical ratings. Cross-reference datasheets to ensure compatibility with existing gate drive levels and thermal constraints.