SI5511DC-T1-E3

Overview

The Vishay Siliconix SI5511DC-T1-E3 is a dual N- and P-channel MOSFET in a 1206-8 ChipFET package. It features a 30 V drain-source voltage rating for both channels. The N-channel offers an on-resistance of 0.055 Ω at VGS = 4.5 V with a continuous drain current of 4 A, while the P-channel provides 0.150 Ω at VGS = -4.5 V with a continuous drain current of 3.6 A. Total gate charge is typically 4.2 nC for the N-channel and 2.85 nC for the P-channel. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• TrenchFET Power MOSFET technology
• Halogen-free construction according to IEC 61249-2-21
• RoHS Directive 2002/95/EC compliant

Applications

• Buck-Boost converters
• Digital Signal Controllers (DSC)
• Portable devices

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision C (Document Number: 73787) matches the delivered parts. Ensure proper handling procedures are followed due to the leadless 1206-8 ChipFET package design. Validate that the specific ordering suffix corresponds to the required halogen-free status.

Selection Notes

Select this component when space-constrained dual-channel switching is required in portable electronics. The low gate charge supports efficient high-frequency operation. Verify thermal management requirements against the specified junction-to-ambient resistance values. Ensure gate drive voltages align with the specified RDS(on) test conditions for optimal performance.

Part Context

This part belongs to the Vishay Siliconix 1206-8 ChipFET series, designed for compact surface-mount applications. It integrates complementary N- and P-channel MOSFETs into a single leadless package to minimize footprint. The series targets power management solutions where board area is limited.

Replacement Considerations

SI5511DC-T1-GE3 is the lead-free and halogen-free variant of this component.