SI5513CDC-T1-E3

Overview

The Vishay Siliconix SI5513CDC-T1-E3 is a dual-channel MOSFET in the 1206-8 ChipFET package, integrating an N-channel and a P-channel device. The N-channel exhibits a drain-source voltage of 20 V, continuous drain current of 4 A at TC = 25 °C, and on-resistance of 0.055 Ω at VGS = 4.5 V. The P-channel provides -20 V breakdown, -3.7 A continuous current, and 0.150 Ω on-resistance at VGS = -4.5 V. Total gate charge reaches 4.2 nC for the N-channel and 5.6 nC for the P-channel. Thermal resistance from junction to foot is 40 °C/W maximum.

Feature Summary

• Dual-channel integration within a compact leadless 1206-8 footprint
• Utilizes TrenchFET technology for optimized power performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Load switching for portable electronic devices

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against current datasheet revisions. Validate lot traceability and date codes upon receipt. Ensure proper handling procedures are followed due to the leadless package design.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-foot resistance. Verify that the PCB copper area supports the required power dissipation levels. Confirm gate drive voltages align with the specified thresholds for optimal on-state resistance. Consider the physical dimensions when designing the board layout.

Part Context

This component belongs to the Vishay Siliconix Si5513CDC series, representing dual-channel power MOSFETs designed for space-constrained applications. It utilizes the 1206-8 ChipFET package, which offers thermal performance comparable to larger packages while maintaining a minimal footprint suitable for high-density circuit boards.

Replacement Considerations

Si5513CDC-T1-GE3 (Lead-free and Halogen-free variant)