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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 3.1A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.1A, 2.1A
- Rds On (Max) @ Id, Vgs：75mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The SI5513DC-T1-E3 is a dual N-channel MOSFET from the Vishay Siliconix SI54 series, utilizing TrenchFET technology. It features a 20V drain-source voltage rating and a continuous drain current of 9.6A. The device has a maximum on-resistance of 23mΩ at a gate-source voltage of 10V. It operates within a temperature range of -55°C to +150°C and dissipates up to 3.5W of power. The component is housed in a PowerPAK-SO-8 package with two channels.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- Low on-resistance for efficient power handling
Applications
- Power management circuits requiring dual channel switching
- Battery protection systems
- Load switch applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as availability may be limited. Ensure packaging specifications match production requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring dual N-channel switching with low on-resistance. Verify that the 20V voltage rating and 9.6A current capacity meet system demands. Consider the PowerPAK-SO-8 package dimensions for PCB layout compatibility and thermal management needs.
Part Context
This part belongs to the SI54 series of dual MOSFETs from Vishay Siliconix. It shares the TrenchFET technology platform with other components in the family, offering consistent performance characteristics across similar voltage and current ratings within the product line.
Replacement Considerations
Check for direct substitutes within the SI54 series or equivalent dual N-channel MOSFETs from other manufacturers. Verify pinout compatibility and electrical parameter alignment before substitution.
