SI5515DC-T1-GE3

Overview

The SI5515DC-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-pin ChipFET package. The device features a drain-source breakdown voltage of 15 V and a continuous drain current rating of 40 A. Its maximum on-resistance is specified at 2.6 mΩ. The component operates within a temperature range from -55 °C to +150 °C, with a power dissipation capacity of 75 W.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs into a single compact surface-mount package for space-constrained designs.

Applications

• Power management circuits requiring dual low-side switching capabilities.

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical characteristics and compliance status. Confirm availability through authorized distributors as obsolescence status may vary. Ensure the component meets all required environmental standards for the intended application before procurement.

Selection Notes

Select this component when a dual N-channel configuration is required in a small footprint. Compare the 2.6 mΩ on-resistance and 40 A current rating against system load requirements. Verify that the 15 V voltage rating aligns with the circuit's operating conditions and thermal constraints.

Part Context

This part belongs to the Vishay Siliconix SI55 series of dual MOSFETs. It shares the ChipFET-8 package form factor with other devices in the family, such as the SI5445BDC-T1-GE3, offering similar mechanical integration options for high-density PCB layouts.

Replacement Considerations

The SI5515DC-T1 is listed as an alias for this component. Verify pinout compatibility if considering alternative dual N-channel MOSFETs from different manufacturers or Vishay series with different voltage ratings.