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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 6A CHIPFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：39mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 10V
- Power - Max：8.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® ChipFET™ Dual
- Supplier Device Package：PowerPAK® ChipFet Dual
- Grade：-
- Qualification：-
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Overview
The SI5517DU-T1-E3 is a dual N- and P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-pin PowerPAK ChipFet Dual package for surface mount applications. The device supports a drain-source voltage of 20V and provides a continuous drain current of 6A at 25°C. Key electrical parameters include a maximum on-resistance of 39 milliohms at 4.5V gate drive, a gate charge of 16nC, and an input capacitance of 520pF. It operates within a junction temperature range of -55°C to 150°C and features logic-level gate control.
Feature Summary
- Dual configuration integrating both N-channel and P-channel MOSFETs in a single compact package.
- TrenchFET technology implementation for optimized power performance.
- Logic-level gate drive capability for direct interface with standard digital logic signals.
Applications
- Power distribution circuits requiring complementary switching.
- Battery protection modules utilizing dual-channel control.
- Load switch applications in portable electronic devices.
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability should focus on surplus distributors or secondary market sources rather than primary supply chains. Buyers must confirm the specific revision status and authenticity through authorized channels before procurement.
Selection Notes
Designers should verify that the 20V voltage rating and 6A current capacity meet the specific circuit requirements. The 39 milliohm on-resistance specification applies under defined test conditions; thermal management must account for power dissipation limits in the PowerPAK package during operation.
Part Context
The SI5517DU belongs to the SI55 series of dual MOSFET arrays from Vishay Siliconix. This series is designed for space-constrained applications where combining complementary switches reduces board area. The part represents a silicon-based solution using planar trench technology.
Replacement Considerations
SI5517DU-T1-GE3
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
Does this component support logic-level gate drive?
Yes, the device features logic-level gate drive capability.
What is the package type for this dual MOSFET?
It is packaged in a PowerPAK ChipFet Dual 8-pin surface mount package.
