SI5517DU-T1-GE3

Overview

The Vishay Siliconix SI5517DU-T1-GE3 is a dual N- and P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a thermally enhanced PowerPAK ChipFET package with dimensions of 3.0 mm x 1.9 mm x 0.8 mm. The device supports a drain-source voltage (VDS) of ±20 V. Maximum continuous drain current (ID) reaches 6 A at TC = 25 °C, or 7.2 A on an FR4 board at TA = 25 °C for the N-channel. On-resistance (RDS(on)) is specified at 0.039 Ω for the N-channel and 0.072 Ω for the P-channel at VGS = ±4.5 V. Total gate charge (Qg) is typically 10.5 nC for the N-channel and 9.1 nC for the P-channel at VGS = 8 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture providing low on-resistance
• Thermally enhanced PowerPAK ChipFET package with small footprint area
• Thin 0.8 mm profile suitable for space-constrained designs

Applications

• Complementary MOSFET configurations for portable devices
• Buck-boost circuits requiring matched N/P-channel pairs

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and lead-free status by reviewing the specific shipment documentation against Vishay material categorization guidelines. Ensure ordering suffixes match the required tape-and-reel packaging format.

Selection Notes

Evaluate thermal resistance ratings based on the intended mounting surface area and ambient conditions. Compare RDS(on) values across different gate voltages to ensure compatibility with available logic levels. Verify that peak pulsed drain currents remain within safe operating limits during transient load events.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency switching applications. The dual configuration allows for compact complementary circuit implementations in mobile electronics. The PowerPAK ChipFET package provides improved thermal performance compared to standard SOT packages.

Replacement Considerations

SI5517DU-GE3

FAQ

What is the maximum junction-to-case thermal resistance?

The maximum junction-to-case thermal resistance (RthJC) is 15 °C/W for both the N-channel and P-channel.

Is manual soldering recommended for this component?

Manual soldering with a soldering iron is not recommended for this leadless component due to rework condition limitations.

What are the body diode reverse recovery characteristics?

The N-channel body diode has a typical reverse recovery time (trr) of 45 ns and charge (Qrr) of 21 nC. The P-channel has a typical trr of 30 ns and Qrr of 15 nC.