SI5902BDC-T1-E3

Overview

The Vishay Siliconix Si5902BDC-T1-E3 is a dual N-Channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of ±20 V. The device offers a typical on-state resistance (RDS(on)) of 0.065 Ω at VGS = 10 V and 0.100 Ω at VGS = 4.5 V. Continuous drain current (ID) is rated at 4 A at TC = 25 °C. Thermal characteristics include a maximum junction-to-foot resistance of 40 °C/W and a maximum junction-to-ambient resistance of 85 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual-channel configuration within a compact leadless 1206-8 footprint
• TrenchFET power MOSFET structure for low on-resistance
• RoHS compliant and halogen-free construction

Applications

• Load switching for portable applications
• DC/DC converter circuits

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free manufacturing. Confirm that the required variant matches the exact part number, as suffixes may denote differences in halogen content or packaging format. Ensure compatibility with standard surface mount assembly processes for the 1206-8 ChipFET package.

Selection Notes

Select this component for designs requiring two independent N-Channel switches in a minimal board area. The 1206-8 package provides thermal performance comparable to larger SO-8 packages while occupying significantly less space. Evaluate the 0.065 Ω RDS(on) specification against load requirements to ensure adequate current handling capabilities within the specified thermal constraints.

Part Context

This component belongs to the Vishay Siliconix Si59xx series of dual MOSFETs. It utilizes the 1206-8 ChipFET package, which shares dimensions with standard passive components but delivers high-power semiconductor performance. The device integrates two N-Channel transistors into a single leadless package to optimize PCB real estate.

Replacement Considerations

Si5902BDC-T1-GE3

FAQ

What is the maximum junction-to-ambient thermal resistance?

The maximum junction-to-ambient thermal resistance is 85 °C/W.

Is the Si5902BDC-T1-E3 halogen-free?

No, the -E3 version is not guaranteed halogen-free. The -GE3 suffix denotes the halogen-free variant.

What is the continuous drain current rating at 25 °C case temperature?

The continuous drain current is 4 A when the case temperature is maintained at 25 °C.