SI5902DC-T1-E3

Overview

The Vishay Siliconix SI5902DC-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a drain-source voltage rating of 30 V and a continuous drain current of ±3.9 A at 25 °C. The device exhibits a maximum on-state resistance of 0.085 Ω at VGS = 10 V and 0.143 Ω at VGS = 4.5 V. Thermal performance includes a junction-to-ambient resistance of 60 °C/W (maximum) under steady-state conditions. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual configuration with independent N-channel MOSFETs integrated into a single surface-mount footprint.
• TrenchFET power architecture designed for low gate charge and fast switching speeds.
• Leadless ChipFET package construction optimized for high-density PCB layouts.

Applications

• Power management circuits requiring compact dual-switch solutions.
• Battery protection modules within portable electronic devices.
• Low-voltage DC-DC converter topologies.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead content. Confirm that the component meets RoHS Directive 2002/95/EC requirements prior to integration. Ensure compatibility with the specified 1206-8 ChipFET package dimensions during the procurement phase.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate thermal constraints carefully, as the leadless package relies heavily on PCB copper area for heat dissipation. Verify that the 30 V drain-source voltage rating provides adequate margin for the target application's supply rails.

Part Context

This part belongs to the Vishay Siliconix Si59xx series of dual MOSFETs. It shares the same physical package and general electrical characteristics with the Si5904DC, though specific on-resistance values differ between the two models.

Replacement Considerations

Si5904DC-T1-E3

FAQ

What is the maximum junction temperature for the SI5902DC?

The operating junction and storage temperature range extends up to +150 °C.

How does the package design affect soldering?

The ChipFET is a leadless package where the end of the lead terminal is exposed copper; manual soldering with an iron is not recommended.

What is the typical forward transconductance?

The forward transconductance is typically 20 S when measured at VDS = 15 V and ID = 2.9 A.