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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3.1A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.1A
- Rds On (Max) @ Id, Vgs：75mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The SI5904DC-T1-E3 is a dual N-channel PowerTrench MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The component is housed in an 8-lead ChipFET package, designed for surface-mount applications. Key electrical characteristics include a drain-source voltage rating of 20 V and a continuous drain current of 6.7 A at 25°C. The device features a maximum gate-source voltage of ±8 V and operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Low on-resistance enabled by advanced TrenchFET planar technology
- Enhanced thermal performance through optimized lead frame design
Applications
- Power distribution circuits requiring dual channel control
- Load switches in portable battery-powered devices
- High-side or low-side switching in DC-DC converter topologies
Procurement Notes
Verify the specific ordering suffix and manufacturer documentation before integration, as component specifications may vary between production lots. Confirm RoHS compliance status directly with the supplier or official datasheet, as regulatory markings can change over time. Ensure that the source provides valid traceability records for quality assurance purposes.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. Compare the Rds(on) values against system power loss requirements. Verify that the ChipFET package dimensions fit the PCB layout constraints. Check the thermal resistance parameters to ensure adequate heat dissipation under expected load conditions.
Part Context
This part belongs to the SI5 series of Vishay Siliconix MOSFETs, which are characterized by their use of TrenchFET technology for improved efficiency. The series is commonly used in consumer electronics and industrial applications where space-saving dual configurations are beneficial. The 'E3' suffix typically indicates lead-free and RoHS compliance.
Replacement Considerations
Consult official replacement guides from Vishay for direct equivalents. Verify pin compatibility and electrical ratings such as Vds, Id, and Rds(on) before substituting. Ensure the alternative package matches the existing footprint to avoid PCB redesign.
