SI5905DC-T1-GE3

$0.39

Description：MOSFET 2P-CH 8V 3A 1206-8
Series：TrenchFET®

SKU:66c3dca1907d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 8V 3A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：8V
Current - Continuous Drain (Id) @ 25°C：3A
Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：1206-8 ChipFET™
Grade：-
Qualification：-

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SI5905DC-T1-GE3

Overview

The Vishay Siliconix Si5905DC-T1-GE3 is a dual P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features an 8 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of ±4.1 A at 25 °C, with a typical on-state resistance of 0.090 Ω at VGS = -4.5 V. Packaged in a leadless 1206-8 ChipFET format, it supports low-voltage logic control with a gate threshold voltage rated at 1.8 V.

Feature Summary

Dual P-channel configuration housed in a compact leadless surface-mount package
TrenchFET power MOSFET architecture optimized for low on-resistance
Capable of operation with a 1.8 V gate-to-source drive level

Applications

Low-voltage load switching circuits
Power management modules requiring small form factors
Battery protection and control systems

Procurement Notes

Verify the specific ordering suffix when sourcing components. The Si5905DC-T1-GE3 designation indicates compliance with both RoHS directives and halogen-free requirements under IEC 61249-2-21 standards. Confirm that the received units match this exact part number to ensure the correct environmental specifications are met for your assembly process.

Selection Notes

Select this component for applications requiring a dual P-channel solution in a minimal footprint. Ensure the design accommodates the thermal constraints associated with the 1206-8 package, specifically considering the steady-state junction-to-ambient thermal resistance. Validate that the system's gate drive voltage aligns with the specified 1.8 V threshold for optimal performance.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family, which utilizes advanced planar trench technology to achieve superior on-resistance characteristics relative to standard planar devices. The Si5905DC variant specifically addresses the demand for high-density power switching in space-constrained portable electronics and industrial control boards.