SI5908DC-T1-GE3

Overview

The Vishay Siliconix SI5908DC-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 5.9 A at 25 °C. The device exhibits an ultra-low on-state resistance (RDS(on)) of 0.040 Ω at VGS = 4.5 V. Key dynamic parameters include a total gate charge (Qg) of 57.5 nC and turn-on delay time of 30 ns. Thermal performance includes a junction-to-foot resistance of 30 °C/W typical and a junction-to-ambient resistance of 90 °C/W steady state.

Feature Summary

• Dual-channel configuration with independent N-Channel MOSFETs integrated into a single compact footprint.
• TrenchFET power MOSFET architecture providing ultra-low RDS(on) for enhanced efficiency.
• Leadless 1206-8 ChipFET package design that maximizes thermal dissipation while minimizing board area usage.

Applications

• Load Switch
• PA Switch
• Battery Switch

Procurement Notes

Verify the specific ordering suffix to ensure compliance with environmental directives. The -E3 designation confirms lead-free construction, while the additional -GE3 suffix indicates halogen-free status according to IEC 61249-2-21 definitions. Confirm RoHS Directive 2002/95/EC compliance requirements during component sourcing.

Selection Notes

Select this component when high-density packaging is required alongside robust power handling capabilities. The 1206-8 footprint offers significant board area reduction compared to standard SO-8 packages while maintaining comparable thermal performance. Ensure adequate copper pad areas are designed for the drain connections to optimize heat dissipation.

Part Context

This part belongs to the Vishay Siliconix Si5908DC series of dual N-channel MOSFETs. It utilizes the proprietary ChipFET technology within the 1206-8 leadless package format. The product line emphasizes low on-resistance and excellent power handling characteristics suitable for space-constrained power management applications.

Replacement Considerations

Direct replacement requires verifying pin compatibility and electrical ratings. The Si5908DC-T1-E3 serves as the lead-free equivalent without the halogen-free guarantee. Cross-reference thermal resistance values if replacing with other dual-channel MOSFETs in similar footprints to ensure adequate heat dissipation.

FAQ

What is the maximum junction temperature rating?

The operating junction and storage temperature range extends from -55 °C to +150 °C.

How does the package affect thermal performance?

The leadless 1206-8 ChipFET package provides a junction-to-foot thermal resistance of 30 °C/W typical, offering performance comparable to larger SO-8 packages despite having a significantly smaller body area.

What is the pulsed drain current capability?

The device supports a pulsed drain current (IDM) of up to 20 A.