SI5920DC-T1-E3

Overview

The Si5920DC-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features an 8 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a continuous drain current of 4 A in the ChipFET package. On-state resistance (RDS(on)) varies with gate-source voltage: 0.032 Ω at 4.5 V, 0.036 Ω at 2.5 V, 0.045 Ω at 1.8 V, and 0.054 Ω at 1.5 V. Total gate charge is typically 7.3 nC at 4.5 V. Maximum power dissipation is 3.12 W at a case temperature of 25 °C.

Feature Summary

• Dual N-Channel Configuration
• Ultra Low On-Resistance
• ChipFET Package

Applications

• Load Switch for Portable Applications

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the provided datasheet number 73490. Confirm that the ordering suffix matches the lead-free specification required for your assembly process. Ensure all technical parameters align with your design requirements before finalizing procurement decisions.

Selection Notes

Select this component when low on-resistance is critical for portable applications requiring operation at VGS = 1.5 V. Consider the thermal characteristics and package limitations when determining current ratings. Evaluate the total gate charge and switching speeds for high-frequency applications.

Part Context

This part belongs to the Vishay Siliconix Si5920 series of dual N-channel MOSFETs. It is designed for space-saving applications where low on-resistance and fast switching are essential. The ChipFET package offers thermally enhanced performance suitable for compact designs.

Replacement Considerations

Consult the official datasheet for recommended alternative parts. Verify pinout compatibility and electrical specifications before substituting any components.