ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 8V 4A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：680pF @ 4V
- Power - Max：3.12W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI5920DC-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features an 8 V drain-source voltage rating and a maximum continuous drain current of 4 A. The device offers ultra-low on-resistance, specified at 0.032 Ω at VGS = 4.5 V and 0.054 Ω at VGS = 1.5 V. Designed for low-voltage operation, it guarantees functionality with a gate-source threshold voltage as low as 1 V. Key dynamic parameters include a typical total gate charge of 7.3 nC and a junction temperature range from -55 °C to +150 °C.
Feature Summary
- TrenchFET Power MOSFET technology providing optimized specific on-resistance
- Guaranteed operational capability at VGS = 1.5 V for space-constrained designs
- Leadless 1206-8 ChipFET package designed for enhanced thermal dissipation
Applications
- Load switching for portable electronic applications
- Low-voltage power management circuits requiring compact footprints
Procurement Notes
Verify the component against the official Vishay datasheet Document Number 73490 to confirm electrical characteristics and pinout configurations. Ensure that the ordering suffix matches the required halogen-free specification (GE3). Confirm that the supply chain source provides traceability documentation consistent with the manufacturer's quality standards.
Selection Notes
Select this component when designing circuits that require dual N-channel switching within a restricted board area. The device is suitable for applications demanding reliable performance at very low gate drive voltages, specifically around 1.5 V. Evaluate the thermal resistance ratings to ensure adequate heat dissipation under steady-state operating conditions.
Part Context
This part belongs to the Vishay Siliconix Si5920DC series of dual N-channel MOSFETs. It utilizes the 1206-8 ChipFET package format, which integrates two independent channels into a single surface-mount footprint. The product line emphasizes high efficiency and low profile construction for modern consumer electronics.
Replacement Considerations
Consult the official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical ratings, package dimensions, and thermal characteristics.
