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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.7A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.7A
- Rds On (Max) @ Id, Vgs：144mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：276pF @ 10V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5933CDC-T1-E3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a -20 V drain-source voltage rating and a maximum continuous drain current of -3.7 A at a case temperature of 25 °C. The on-state resistance (RDS(on)) is specified as 0.144 Ω at VGS = -4.5 V, 0.180 Ω at VGS = -2.5 V, and 0.222 Ω at VGS = -1.8 V. Total gate charge is typically 4.1 nC at VGS = -4.5 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual-channel configuration with independent P-Channel MOSFETs integrated into a single compact footprint.
- TrenchFET power MOSFET architecture providing low on-state resistance and optimized switching performance.
- Leadless 1206-8 ChipFET package design that maximizes thermal dissipation through exposed copper drain terminals.
Applications
- Load switching for portable electronic devices
- Power distribution circuits requiring compact form factors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The SI5933CDC-T1-E3 designation indicates lead-free construction. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change without prior notice.
Selection Notes
Select this component when a dual P-Channel solution is required within a standard 1206 resistor footprint. Ensure the application voltage does not exceed the -20 V drain-source limit. Verify that the PCB layout accommodates the exposed copper drain pads for adequate thermal management and soldering integrity.
Part Context
This part belongs to the Vishay Siliconix SI59 series of dual MOSFETs. It utilizes the 1206-8 ChipFET package, which shares physical dimensions with passive components but offers semiconductor-grade power handling capabilities. The device is designed to replace discrete dual-transistor solutions in space-constrained designs.
Replacement Considerations
The SI5933CDC-T1-GE3 is a verified alternative offering identical electrical characteristics with explicit halogen-free certification according to IEC 61249-2-21 definitions.
