SI5933CDC-T1-GE3

Overview

The Vishay Siliconix SI5933CDC-T1-GE3 is a dual P-channel MOSFET in a leadless 1206-8 ChipFET package. It features a -20 V drain-source voltage and a maximum continuous drain current of -3.7 A at TC = 25 °C. The on-state resistance is 0.144 Ω at VGS = -4.5 V, with a typical total gate charge of 4.1 nC. Operating junction temperature ranges from -55 °C to 150 °C, and the device complies with RoHS directives.

Feature Summary

• Dual P-channel configuration utilizing TrenchFET technology for enhanced power performance within a compact footprint.
• Leadless 1206-8 ChipFET package design that provides thermal dissipation comparable to larger SO-8 packages while significantly reducing board area requirements.

Applications

• Load switching for portable electronic devices

Procurement Notes

Verify component authenticity by checking the marking code against official datasheet specifications. Confirm compliance with Halogen-free standards per IEC 61249-2-21 and RoHS Directive 2002/95/EC. Ensure proper handling procedures are followed due to the exposed copper terminals characteristic of the leadless singulation process.

Selection Notes

Select this component when high-density packaging is required alongside robust thermal management capabilities. The 1206-8 form factor allows for an 80% reduction in body area compared to traditional packages without sacrificing power dissipation limits. Evaluate PCB copper spreading to optimize junction-to-ambient thermal resistance for specific load conditions.

Part Context

This part belongs to the Vishay Siliconix ChipFET family, which integrates power semiconductor performance into standard passive component footprints. The dual-channel architecture consolidates two independent P-channel MOSFETs into a single surface-mount device, streamlining circuit layout for multi-rail or differential applications.

Replacement Considerations

Direct replacements must match the -20 V rating, dual P-channel topology, and 1206-8 leadless package outline. Verify that alternative components maintain equivalent RDS(on) values and thermal resistance characteristics to ensure identical board space utilization and heat dissipation profiles.

FAQ

What is the recommended soldering approach for the leadless 1206-8 package?

Manual soldering with a soldering iron is not recommended. The device requires reflow soldering processes adhering to the specified peak temperature of 260 °C.

How does the thermal performance compare to an SO-8 package?

The 1206-8 ChipFET offers steady-state junction-to-ambient thermal resistance identical to the SO-8 package (approximately 90 °C/W on a 1-inch square FR4 board), despite having a significantly smaller physical footprint.