SI5935CDC-T1-E3

Overview

The Vishay Siliconix Si5935CDC-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology in a leadless 1206-8 ChipFET package. It features a drain-source voltage of -20 V and an on-state resistance of 0.100 Ω at VGS = -4.5 V, with a typical total gate charge of 6.2 nC. The device supports continuous drain currents up to -4 A at TC = 25 °C and operates within a junction temperature range of -55 °C to +150 °C. Thermal resistance from junction to foot is typically 33 °C/W, ensuring efficient power dissipation.

Feature Summary

• Dual P-channel configuration integrated into a compact leadless 1206-8 ChipFET package for space-constrained designs.
• TrenchFET power MOSFET architecture providing low on-state resistance and high switching efficiency.
• Lead-free construction compliant with RoHS Directive 2002/95/EC and halogen-free according to IEC 61249-2-21.

Applications

• Load switch applications for portable electronic devices
• Battery management and switching circuits

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free status, while -GE3 confirms both lead-free and halogen-free compliance. Confirm availability through authorized distributors as manufacturing locations may vary. Ensure the component matches the required thermal and electrical specifications for the target circuit design before procurement.

Selection Notes

Select this component for dual-channel P-channel switching requirements where minimal board area is critical. The 1206-8 footprint offers thermal performance comparable to larger SO-8 packages while occupying significantly less surface area. Evaluate the on-resistance and gate charge parameters against the driving circuit capabilities to ensure optimal switching speeds and conduction losses.

Part Context

This part belongs to the Vishay Siliconix Si59 series of dual P-channel MOSFETs. It utilizes the proprietary ChipFET leadless packaging technology, which integrates the die directly onto the substrate to minimize thermal resistance and footprint size compared to traditional plastic packages.

Replacement Considerations

Si5935CDC-T1-GE3 (Halogen-free variant)