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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：100mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：455pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5935CDC-T1-GE3 is a dual P-channel enhancement mode power MOSFET utilizing TrenchFET technology. It features a leadless 1206-8 ChipFET package with eight terminals. The device supports a drain-source voltage of -20 V and a continuous drain current of -4 A at a case temperature of 25 °C. On-state resistance (RDS(on)) ranges from 0.083 Ω to 0.156 Ω depending on the gate-source voltage. Total gate charge is typically 7.1 nC. Operating junction temperatures range from -55 °C to 150 °C, with maximum power dissipation of 3.1 W at 25 °C.
Feature Summary
- Dual-channel configuration in a compact leadless surface-mount package
- TrenchFET technology for optimized on-resistance and switching performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Load switching for portable electronic devices
- Battery management and protection circuits
Procurement Notes
Verify component authenticity by checking the marking code DK XXX against official Vishay documentation. Confirm the suffix GE3 indicates lead-free and halogen-free compliance. Ensure ordering information matches the specific tape-and-reel requirements for automated assembly processes.
Selection Notes
Select this component when low profile and high thermal efficiency are required in minimal board space. Evaluate RDS(on) specifications relative to the available gate drive voltage. Consider the thermal resistance characteristics and PCB copper area requirements for adequate heat dissipation during operation.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family of dual-channel MOSFETs. It utilizes the 1206-8 ChipFET package, which provides thermal performance comparable to larger SO-8 packages while occupying significantly less board area. The design integrates two independent P-channel transistors within a single leadless footprint.
Replacement Considerations
The Si5935CDC-T1-E3 is the lead-free variant without halogen-free certification. Verify pinout compatibility and electrical parameters before substituting other dual P-channel MOSFETs in the 1206-8 package format.
