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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：86mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The SI5935DC-T1-E3 is a dual P-channel MOSFET from the Vishay Siliconix SI54 series, utilizing TrenchFET technology. It features a -20V drain-source breakdown voltage and a continuous drain current of 4A. The device offers a maximum on-resistance of 58 milliohms at a gate-source voltage of -4.5V. Packaged in a compact 1206-8 ChipFET format, it supports an operating temperature range from -55°C to +150°C with a power dissipation rating of 1.7W.
Feature Summary
- Dual P-channel configuration for efficient high-side switching applications
- TrenchFET technology ensures low on-resistance and fast switching performance
- Compact 1206-8 ChipFET package optimizes board space utilization
Applications
- Power distribution circuits requiring dual channel control
- Battery protection modules for portable electronic devices
- Load switches in consumer electronics and industrial systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notifications prior to procurement. Ensure supply chain integrity by validating lot traceability and storage conditions to maintain device reliability during assembly processes.
Selection Notes
Evaluate thermal management requirements against the 1.7W power dissipation limit. Compare on-resistance specifications with alternative dual MOSFET packages for impedance matching. Verify gate drive compatibility with the -4.5V threshold for optimal conduction efficiency in low-voltage logic interfaces.
Part Context
This component belongs to the SI54 series of dual MOSFETs designed for space-constrained designs. It complements single-channel variants by providing integrated dual functionality within a standard 1206 footprint, facilitating simplified layout and reduced component count in power management architectures.
Replacement Considerations
Consult official substitution guides for equivalent dual P-channel MOSFETs in 1206-8 packages. Verify pinout compatibility and electrical parameter alignment before implementing any cross-reference components in existing circuit designs.
