ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：86mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
Download product information
Overview
The SI5935DC-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK ChipFET package. The device features a drain-source voltage rating of 30V and a continuous drain current of 6A. Key electrical parameters include a maximum on-resistance of 30 milliohms at 5A and 10V, a gate charge of 11nC at 10V, and an input capacitance of 320pF at 15V. The component supports a junction temperature range from -55°C to +150°C with a maximum power dissipation of 10.4W.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- PowerPAK ChipFET surface mount packaging
Applications
- Battery protection circuits
- Load switching applications
- Power management modules
Procurement Notes
Verify the specific suffix and manufacturer details against official datasheets before integration. Confirm availability status as distribution channels may vary. Ensure compliance with RoHS directives and check for any obsolescence notifications from the manufacturer prior to finalizing procurement plans.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact footprint. Evaluate thermal requirements against the 10.4W dissipation limit. Compare on-resistance and gate charge specifications against system efficiency targets and drive voltage capabilities to ensure optimal switching performance.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for low-side switching and load control. It serves as a complementary or alternative solution within the broader portfolio of dual MOSFET arrays, offering enhanced thermal performance compared to standard discrete packages.
Replacement Considerations
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical ratings carefully when considering alternative dual N-channel MOSFETs from other manufacturers to ensure compatibility.
